HYDROSTATIC PRESSURE EFFECTS ON INTERBAND TRANSITIONS OF SEMICONDUCTORS

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dc.contributor.authorWOLFE, MARTIN IRA
dc.date.accessioned2018-07-12T17:54:26Z
dc.date.available2018-07-12T17:54:26Z
dc.date.issued1973
dc.identifier.citationSource: Dissertation Abstracts International, Volume: 34-09, Section: B, page: 4595.
dc.identifier.urihttps://ezproxy.yu.edu/login?url=http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:7407867
dc.identifier.urihttps://hdl.handle.net/20.500.12202/2178
dc.publisherProQuest Dissertations & Theses
dc.subjectCondensed matter physics.
dc.titleHYDROSTATIC PRESSURE EFFECTS ON INTERBAND TRANSITIONS OF SEMICONDUCTORS
dc.typeDissertation

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Katz School of Science and Health: Mathematical Sciences Dissertations